| PART |
Description |
Maker |
| NAND08GW3B2AN1E NAND08GW3B2AN1F NAND04GW3B2AN1E NA |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| TH58NVG5S0FTA20 |
32 GBIT (4G × 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TC58NVG1S3ETA00 |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| S34ML16G2 |
16-Gbit, 4-Bit ECC, ×8 I/O, 3 V VCC NAND Flash for Embedded
|
Cypress Semiconductor
|
| TC58NYG1S3EBAI5 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TC58DVG02A1FI0 |
1 Gbit (128M x *8its) CMOS NAND EPROM
|
Toshiba
|
| TH58100FT |
1-GBIT (128M x 8 BITS) CMOS NAND E2PROM
|
TOSHIBA
|
| TMP90PM36 |
A System Evaluation LSI With 8-Bit CPU,One-Time PROM(32968 x 8-Bit),RAM(1024 x 8-Bit)(系统评估大规模集成电路（集成8位CPU，一次可编程ROM(32968 x 8,RAM(1024 x 8)
|
Toshiba Corporation
|
| DS25LV02 DS25LV02RU DS25LV02R DS25LV02RR DS25LV02R |
Low-Voltage 1024-Bit EPROM
1024-Bit EPROM Operates Down to 2.2V and is Backwards-Compatible with the DS2502
|
MAXIX
MAXIM[Maxim Integrated Products]
|
| TH58NS100DC |
1-GBIT (128M x 8 BITS) CMOS NAND E PROM (128M BYTE SmartMedia )
|
TOSHIBA
|
| PC28F00AP30TFA PC28F00BP30EFA |
Numonyx? Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit
|
Micron Technology
|
